2004. 1. 29 1/4 semiconductor technical data KTN2222AE epitaxial planar npn transistor revision no : 0 general purpose application. switching application. features low leakage current : i cex =10na(max.) ; v ce =60v, v eb(off) =3v. low saturation voltage : v ce(sat) =0.3v(max.) ; i c =150ma, i b =15ma. complementary to ktn2907ae. dim millimeters a b d e esm 1.60 0.10 0.85 0.10 0.70 0.10 0.27+0.10/-0.05 1.60 0.10 1.00 0.10 0.50 0.13 0.05 c g h j 1 3 2 e b d a g h c j 1. emitter 2. base 3. collector + _ + _ + _ + _ + _ + _ maximum rating (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6 v collector current i c 600 ma collector power dissipation (ta=25 ) p c 100 mw junction temperature t j 150 storage temperature range t stg -55 150 marking z g
2004. 1. 29 2/4 KTN2222AE revision no : 0 electrical characteristics (ta=25 ) * pulse test : pulse width 300 s, duty cycle 2%. input impedance h ie i c =1ma, v ce =10v, f=1khz 2 - 8 k i c =10ma, v ce =10v, f=1khz 0.25 - 1.25 voltage feedback ratio h re i c =1ma, v ce =10v, f=1khz - - 8 x10 -4 i c =10ma, v ce =10v, f=1khz - - 4 small-singal current gain h fe i c =1ma, v ce =10v, f=1khz 50 - 300 i c =10ma, v ce =10v, f=1khz 75 - 375 collector output admittance h oe i c =1ma, v ce =10v, f=1khz 5 - 35 i c =10ma, v ce =10v, f=1khz 25 - 200 collector-base time constant c c rbb' i e =20ma, v cb =20v, f=31.8mhz - - 150 ps noise figure nf i c =100 a, v ce =10v, - - 4 db switching time delay time t d v cc =30v, v be(off) =0.5v i c =150ma, i b1 =15ma - - 10 ns rise time t r - - 25 storage time t stg v cc =30v, i c =150ma i b1 =-i b2 =15ma - - 225 fall time t f - - 60 characteristic symbol test condition min. typ. max. unit collector cut-off current i cex v ce =60v, v eb(off) =3v - - 10 na collector cut-off current i cbo v cb =60v, i e =0 - - 0.01 a emitter cut-off current i ebo v eb =3v, i c =0 - - 10 na collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 75 - - v collector-emitter breakdown voltage * v (br)ceo i c =10ma, i b =0 40 - - v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6 - - v dc current gain * h fe (1) i c =0.1ma, v ce =10v 35 - - h fe (2) i c =1ma, v ce =10v 50 - - h fe (3) i c =10ma, v ce =10v 75 - - h fe (4) i c =150ma, v ce =10v 100 - 300 h fe (5) i c =500ma, v ce =10v 40 - - collector-emitter saturation voltage * v ce(sat) 1 i c =150ma, i b =15ma - - 0.3 v v ce(sat) 2 i c =500ma, i b =50ma - - 1 base-emitter saturation voltage * v be(sat) 1 i c =150ma, i b =15ma 0.6 - 1.2 v v be(sat) 2 i c =500ma, i b =50ma - - 2.0 transition frequency f t v ce =20v, i c =20ma, f=100mhz 300 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=1.0mhz - - 8 pf input capacitance c ib v eb =0.5v, i c =0, f=1.0mhz - - 25 pf
2004. 1. 29 3/4 KTN2222AE revision no : 0 c collector current i (ma) 10 dc current gain h fe 1 0.5 collector current i (ma) c 0 collector-emitter voltage v (v) ce ce c i - v h - i transition frequency f (mhz) collector current i (ma) c t f - i 0.4 0.8 1.2 1.6 200 400 600 800 fe c 30 50 100 300 500 1k v =10v ce tc 10 -1 100 -10 -100 -1k -3 k ta=25 c v =10v 1000 ce common emitter ta=25 c 1.8 1000 i =2ma b 3 10 30 100 300 1k ta=-25 c ta=25 c ta=75 c 100 0.5 1 0.6 0.4 0.2 0 collector-emitter saturation ce(sat) 10 330 v - i ce(sat) c 1k 300 i /i =10 c voltage v (v) collector current i (ma) c v ce(sat) common emitter b base-emitter saturation voltage v (v) collector current i (ma) 3 0.2 0.5 be(sat) 1 0 10 30 100 c 1k 300 0.4 i /i =10 common emitter v - i be(sat) cb c 0.6 0.8 1.0 1.2 1.4 1.6 v be(sat) ta=-25 c ta=25 c ta=75 c collector current i (ma) 0.2 0.05 base-emitter voltage v (v) be c 0.3 0.4 0.5 0.6 0.1 0.3 1 3 10 30 100 300 500 0.7 0.8 0.9 1.0 i - v cbe ta=75 c ta=25 c ta=-25 c common emitter v =10v ce 6ma 4ma 8ma 10ma 12ma 14ma 16ma 18ma 20ma v =1v ce v =2v ce ta=25 c 30 300 -3 -30 -300
2004. 1. 29 4/4 KTN2222AE revision no : 0 collector output capacitance cob (pf) collector-base voltage v (v) cb cob - v cb 1.0 -0.1 10 -1.0 -10 -100 -300 common emitter ta=25 c 100 emitter-base voltage v (v) eb collector input capacitance cib (pf) 3.0 30 cib cob f=1mhz, eb cib - v collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta p (mw) 25 50 75 100 125 150 175 50 100 150 200
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